GaNTT – Gallium Nitride Trench-FET Development for Automotive Power Applications

Date: 06.04.2024

Topics: Net Zero, Power Electronics


The opportunity

Outcomes/Technical breakthroughs

Our main areas of focus have been:

• the development of a UK source of thick GaN epi substrates required for the vertical device
• damage-free GaN etching to form a suitable vertical channel
• successful materials integration of the gate dielectrics and gate electrode

The project is highly innovative from a design perspective and Swansea University has filed a patent application for the device design.

The Catapult is playing a critical role in the development of supply chains for electric vehicles in the UK and across the globe. That market comprises power electronics, machines, and drives (PEMD). 

Our role

In 2022, CSA Catapult delivered three projects on behalf of the Driving the Electric Revolution Challenge, one of which was gallium nitride trench-FET Development for Automotive Power Applications, known as GANTT. As a partner, we undertook the development of a new gallium nitride (GaN) process platform for automotive power electronics. 


Get in touch

To learn more about how we can work together, get in touch with a member of our team today.

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