GaNext: Driving the future of power electronics with GaN technology

Despite advantages including reduced size, improved energy efficiency, and high-speed performance, GaN technology has faced barriers to widespread adoption.

The challenge for GaNext was to demonstrate not only that GaN systems can outperform traditional silicon-based alternatives, but also that they can be reliably manufactured and integrated into commercially viable products.

This meant addressing complex design, packaging, and control challenges across a diverse set of use cases, while aligning an international supply chain. Ensuring compatibility and performance at the component and system level was critical to building confidence in the technology.

GaNext successfully demonstrated the real-world benefits of GaN in multiple high-demand applications, such as EV charging systems and photovoltaic (PV) inverters.

The project delivered:

• A GaN-on-silicon power IC capable of 650V and up to 70A with integrated sensing and driving.
• Custom control and gate drive circuitry built using both silicon and GaN technologies.
• A dedicated package for the power module, optimised for performance and size.
• Demonstrators that clearly showcased the efficiency and competitive edge of GaN in key market areas.

The project created 30 new skilled jobs and safeguarded existing roles, while positioning UK companies like Cambridge GaN Devices and Lyra Electronics at the forefront of next-generation power electronics.

With its focus on reducing CO₂ emissions and improving energy efficiency across industries, GaNext is set to make a lasting impact on both the environment and the economy.

GaNext will also enable quicker European collaboration with UK partners and stimulate the wider European electronics to share knowledge and expertise.