Dr Wang and CSA Catapult have collaborated to develop a new measuring technique to efficiently explore the link between temperature-sensitive electrical parameters and junction temperature within GaN devices.
This new scalable method characterises the thermal behaviour of GaN transistors during fast-switching transients – pushing beyond the limits of conventional silicon-based systems.
This will support the roll-out of GaN technology within applications related to Net Zero and improve the reliability of new devices. Dr Wang and the team have also created AI-powered simulation models that help to optimise power converters – increasing knowledge-sharing across academia and industry, with the results shared in journals and at conferences such as PEMD.
Importantly, the project underscores the value of collaboration – playing a part in securing two new funded projects, growing the links between CSA Catapult, Cardiff University and industry and setting the stage for future joint work.
CSA Catapult has also increased capabilities in GaN power devices and the AI-driven design optimisation of converters. This partnership brought academic insights to industry applications, and helped the Catapult grow wider professional networks in power electronics.